Standard Specification for Gold Wire for Semiconductor Lead Bonding
1.1 This specification covers round drawn/extruded gold wire for internal semiconductor device electrical connections. Four classifications of wire are distinguished, (1) copper-modified wire, (2) beryllium-modified wire, (3) high-strength wire, and (4) special purpose wire.
Note 1: Trace metallic elements have a significant effect upon the mechanical properties and thermal stability of high-purity gold wire. It is customary in manufacturing to add controlled amounts of selected impurities to gold to modify or stabilize bonding wire properties, or both. This practice is known variously as “modifying,” “stabilizing,” or “doping.” The first two wire classifications denoted in this specification refer to wire made with either of two particular modifiers, copper or beryllium, in general use. In the third and fourth wire classifications, “high-strength” and “special purpose” wire, the identity of modifying additives is not restricted.
1.2 The values stated in SI units shall be regarded as the standard.
1.2.1 A mixed system of metric and inch-pound units is in widespread use for specifying semiconductor lead-bonding wire. SI-equivalent values of other commonly used units are denoted by parentheses in text and tables.
1.3 The following hazard caveat pertains only to the test method portion, Section 9, of this specification. This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.
1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International StandardDetails, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
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