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BS IEC 63275-1:2022

Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability

General Information

Status : Definitive
Standard Type: Main
Document No: BS IEC 63275-1:2022
Document Year: 2022
Pages: 16
  • Section Volume:
  • GBM21 Electronic Components & Devices (GMB21)

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BS IEC 63275-1:2022
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