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IEC 63275-2:2022 (EN-FR)

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

Standard Details

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63275-2:2022 (EN-FR)
Document Year: 2022
Pages: 20
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

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IEC 63275-2:2022 (EN-FR)
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