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IEC 63284:2022 (EN-FR)

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Standard Details

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63284:2022 (EN-FR)
Document Year: 2022
Pages: 25
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

Life Cycle

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IEC 63284:2022 (EN-FR)
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