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IEC 63068-3:2020 (EN-FR)

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Standard Details

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63068-3:2020 (EN-FR)
Document Year: 2020
Pages: 51
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

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IEC 63068-3:2020 (EN-FR)
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