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IEC 63068-1:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Standard Details

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63068-1:2019
Document Year: 2019
Pages: 23
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

Life Cycle

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IEC 63068-1:2019
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