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IEC 63229:2021

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Standard Details

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63229:2021
Document Year: 2021
Pages: 21
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

Life Cycle

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IEC 63229:2021
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