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IEC 63011-3:2018 (EN-FR)

Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via

Standard Details

IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63011-3:2018 (EN-FR)
Document Year: 2018
Pages: 28
Edition: 1.0
  • ICS:
  • 31.200 Integrated circuits. Microelectronics

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IEC 63011-3:2018 (EN-FR)
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