logo

Standards Manage Your Business

We Manage Your Standards

ASTM

ASTM F980 : 92

Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

Standard Details

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of whoever uses this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard information is given in 4.2.7.

General Information

Status : Historical
Standard Type: Main
Document No: ASTM F980 : 92
Document Year: 1992
Pages: 5
  • Section Volume:
  • 10.04 Volume 10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies
  • ICS:
  • 31.080.01 Semiconductor devices in general

Life Cycle

Historical

Historical

Currently Viewing

Historical
ASTM F980 : 92
Knowledge Corner

Expand Your Knowledge and Unlock Your Learning Potential - Your One-Stop Source for Information!

© Copyright 2024 BSB Edge Private Limited.

Enquire now +