logo

Standards Manage Your Business

We Manage Your Standards

IEC

IEC 63373:2022 (EN-FR)

Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

Standard Details

IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

General Information

Status : ACTIVE
Standard Type: Main
Document No: IEC 63373:2022 (EN-FR)
Document Year: 2022
Pages: 28
Edition: 1.0
  • Section Volume:
  • TC 47 Semiconductor devices

Life Cycle

Currently Viewing

ACTIVE
IEC 63373:2022 (EN-FR)
Knowledge Corner

Expand Your Knowledge and Unlock Your Learning Potential - Your One-Stop Source for Information!

© Copyright 2024 BSB Edge Private Limited.

Enquire now +