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SAE 2008-01-2883 : 2008

4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications

Standard Details

Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a normally-off high-current voltage-controlled switch, high-voltage normally-on and low-voltage normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25°C to 300°C temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.

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General Information

Status : ACTIVE
Standard Type: Main
Document No: SAE 2008-01-2883 : 2008
Document Year: 2008

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SAE 2008-01-2883 : 2008
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