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    Transistors

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    Measuring methods for transistors
    JIS C 7030:1993 forword
    Measuring methods for transistors
    IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials
    IEEE 1620:2008 forword
    IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials
    IEEE Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators
    IEEE 1620.1:2006 forword
    IEEE Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators
    Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
    IEC 62899-503-1:2020 forword
    Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor

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    Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
    IEC 62899-503-3:2021 forword
    Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method

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    Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
    IEC 63284:2022 (EN-FR) forword
    Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

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    Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
    IEC 62417:2010 (EN-FR) forword
    Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

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    Semiconductor devices - Hot carrier test on MOS transistors
    IEC 62416:2010 (EN-FR) forword
    Semiconductor devices - Hot carrier test on MOS transistors

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    Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    IEC 60747-8:2010 (EN-FR) forword
    Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

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    Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC 60747-7:2010 (EN-FR) forword
    Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

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    Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    IEC 60747-8:2010/AMD1:2021 forword
    Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

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    Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    IEC 60747-4:2007/AMD1:2017 (EN-FR) forword
    Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

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    Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC 60747-7:2010+AMD1:2019 CSV (EN-FR) forword
    Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

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    Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
    IEC 62373-1:2020 (EN-FR) forword
    Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

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    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
    IEC 62373:2006 (EN-FR) forword
    Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

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    Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
    IEC 63275-1:2022 (EN-FR) forword
    Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

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    Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
    IEC 63275-2:2022 (EN-FR) forword
    Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

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    Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC 60747-7:2010/AMD1:2019 (EN-FR) forword
    Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

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    Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    IEC 60747-4:2007+AMD1:2017 CSV (EN-FR) forword
    Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

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    • $ 781.11 822.22 | PDF |
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    Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
    IEC 60747-4:2007 (EN-FR) forword
    Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

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    Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    IEC 60747-8:2010+AMD1:2021 CSV forword
    Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

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    • $ 743.40 782.53 | PDF |
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    Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
    IEC 60747-9:2019 (EN-FR) forword
    Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

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    Printed electronics - Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length method
    BS IEC 62899-503-3:2021 forword
    Printed electronics - Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length method
    BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) - Part 1. Fast BTI Test method
    17/30366375 DC forword
    BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) - Part 1. Fast BTI Test method
    Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
    BS IEC 63275-1:2022 forword
    Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
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